Plasma Etching Equipment

Plasma dry etching technology is a thin-film microfabrication technique that utilizes plasma for processing. Thanks to its excellent anisotropy and process controllability, it has been widely applied in the manufacturing of basic semiconductor products.

By virtue of its accumulation and innovation in plasma control, reaction chamber design, etching process technology, and software technology,

provides advanced equipment and process solutions for fields including integrated circuits, power semiconductors, compound semiconductors, semiconductor lighting, micro-electro-mechanical systems (MEMS), and advanced packaging. Naura has now achieved full coverage of etching processes and possesses etching capabilities for a variety of materials such as silicon, deep silicon, metals, dielectrics, and compound semiconductors (including SiC, GaN, GaAs, InP, LiNbO₃, LiTaO₃, etc.). It has become the preferred choice of customers due to its superior process performance.
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GDE C200系列 化合物刻蚀机

GDE C200系列 化合物刻蚀机 GDE C200系列 Compound Semiconductor Etcher 化合物刻蚀机采用超高密度等立体源,刻蚀速率高、均匀性好,性能稳定,MTBC长,易维护,在SiC-Power、GaAs-RF、GaN-RF、滤波器、Optic等领域应用广泛,已在多条产线验证成功,积累了丰富的经验,在集成电路、化合物领域、新兴、科研等领域的应用非常广泛。
0.000 (CNY)

PSE V300系列 12英寸等离子体深硅刻蚀机

PSE V300系列 12英寸等离子体深硅刻蚀机 PSE V300系列 Deep Silicon Etcher PSE V300主要用于12英寸深硅刻蚀,最多可同时挂载6个独立反应腔。该设备应用分区进气和气体快速切换系统,兼容Bosch和Non-Bosch工艺,可实现不同尺寸结构的硅通孔和沟槽刻蚀。该设备能满足结构中要求的光滑侧壁轮廓和严格的角度控制,为深硅刻蚀提供优异的解决方案。
0.000 (CNY)

NMC 508系列 8英寸等离子体介质刻蚀机

NMC 508系列 8英寸等离子体介质刻蚀机 NMC 508系列 Dielectric Etcher 介质刻蚀机属于电容耦合等离子体干法刻蚀机(CCP设备),适用于6/8英寸介质层刻蚀工艺。该机台为多腔室集群设备,能够进行全自动并行工艺处理。前后道采用不同频率,实现工艺全覆盖;前道刻蚀速率快,形貌控制优;后道副产物控制优,MTBC长,CoC低。广泛应用于8寸IC、功率器件、化合物半导体等领域。
0.000 (CNY)
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