Plasma dry etching technology is a thin-film microfabrication technique that utilizes plasma for processing. Thanks to its excellent anisotropy and process controllability, it has been widely applied in the manufacturing of basic semiconductor products.
By virtue of its accumulation and innovation in plasma control, reaction chamber design, etching process technology, and software technology,
provides advanced equipment and process solutions for fields including integrated circuits, power semiconductors, compound semiconductors, semiconductor lighting, micro-electro-mechanical systems (MEMS), and advanced packaging. Naura has now achieved full coverage of etching processes and possesses etching capabilities for a variety of materials such as silicon, deep silicon, metals, dielectrics, and compound semiconductors (including SiC, GaN, GaAs, InP, LiNbO₃, LiTaO₃, etc.). It has become the preferred choice of customers due to its superior process performance.
GDE C200系列 化合物刻蚀机 GDE C200系列 Compound Semiconductor Etcher 化合物刻蚀机采用超高密度等立体源,刻蚀速率高、均匀性好,性能稳定,MTBC长,易维护,在SiC-Power、GaAs-RF、GaN-RF、滤波器、Optic等领域应用广泛,已在多条产线验证成功,积累了丰富的经验,在集成电路、化合物领域、新兴、科研等领域的应用非常广泛。
PSE V300系列 12英寸等离子体深硅刻蚀机 PSE V300系列 Deep Silicon Etcher PSE V300主要用于12英寸深硅刻蚀,最多可同时挂载6个独立反应腔。该设备应用分区进气和气体快速切换系统,兼容Bosch和Non-Bosch工艺,可实现不同尺寸结构的硅通孔和沟槽刻蚀。该设备能满足结构中要求的光滑侧壁轮廓和严格的角度控制,为深硅刻蚀提供优异的解决方案。