NVT-HG2200-V1 Single Crystal Growing FurnaceThe NVT-HG2200-V1 is mainly applied to the preparation process of 8–12-inch monocrystalline silicon in the photovoltaic industry. This equipment boasts the advantages of large feeding capacity, high pulling speed, low energy consumption, as well as automation and intelligence. The system is primarily composed of the seed crystal lifting/rotating system, crucible lifting/rotating system, heat shield lifting system and electronic control system. 0.000 (CNY) Qty: Add to cart Custom wishlist OKAdd to wishlistAdd to compare listEmail a friendEquipment Features & Technical SpecificationsEquipment FeaturesApplied to the growth of 8–12 inch solar-grade monocrystalline silicon ingotsMulti-dimensional safety design ensures longer, safer, more stable and reliable operation of the equipmentFully automatic control system enables automated and intelligent monocrystalline silicon productionHigh pulling speed, low energy consumption and reduced production costsTechnical SpecificationsItemSpecificationsCrystal Diameterφ6" – φ12"Main Chamber Sizeφ1100×1400mm, φ1200×1500mm, φ1400×1650mm, φ1600×1900mm, φ1700×2100mmAuxiliary Chamber Sizeφ350×3800mm, φ350×4000mm, φ350×5000mm, φ400×5500mm, φ450×7300mmHot Zone Size26", 28", 30", 32", 36", 40", 42"Heating Power165KW+65KW, 165KW+90KW, 150KW+110KWSeed Crystal Pulling Speed＞1.6mm/minCrucible Lifting Speed0.02–1mm/minProduct tags 单晶炉 (2)
