External quantum efficiency & reflectance
The LOANA system includes all features of the IQE-SCAN.
When combined with other methods in the LOANA system you have various benefits:
- Automatic spectral mismatch correction of subsequent ISC-measurements.
- Calibration of LBIC measurements to global values.
- Correct sample thickness and grid shadowing as input for the automated IQE analysis.
Quantum efficiency mapping
This method uses the focussed light spot from the monochromator to create maps of EQE and/or REFL at any wavelength between 280 nm and 1200 nm with a spatial resolution of approximately 1 mm. The EQE map at 1000 nm of a 156 x 156 mm² solar cell on the right was taken in 5 minutes.
Short circuit current
Instead of tracing the entire IV-curve during the short illumination with a Xenon flash we maintain the solar cell in short circuit during the decay to measure the short ciruit current only.
If an EQE is available the spectral mismatch is calculated automatically and the result used as a setpoint to regulate the intensity of the LED-array. Subsequently, the IV-trace is recorded without compromises in accuracy because plenty of time is available. The spectrum of the Xe-flash is filtered to match class A according to IEC 60904‑9.
Current-Voltage
The IV characteristics is measured under the illumination with an infrared LED array to determine Voc, FF, and efficiency at arbitrary light intensities. The Isc‑Voc characteristics is also measured and fitted to the 2-diode model. The global series resistance is found both from comparing Isc‑Voc with light-IV and from the double light method.
The noise limit in the finest current range is 0.3 µA and low enough to measure the dark characteristics on small solar cells of only a few cm².
Busbar-to-busbar
To separate the total series resistance into its contributions from the fingers, the base, the emitter, and the metal-silicon interfaces it is necessary to know the line resistance of the grid fingers. The resistance between the busbars measured with a test current of several amps contains this information.
Capacitance-Voltage
The base doping can be determined from the plot of 1/C² versus voltage. The width of the space charge region of a silicon solar cell, Wj, depends on the base doping concentration and can be varied with an applied reverse voltage. The solar cell`s capacitance is inversely proportional to Wj and can be measured from the phase and magnitude of the AC current that results when applying a sine modulated reverse voltage.
The base doping concentration must be known for:
- the calculation of base contribution to saturation current J0,base
- the calculation of base contribution to series resistance
- estimating the current limit for small local shunts due to spreading resistance in the base.
Spectrally resolved LBIC
For the features and capabilities please follow this link to our stand-alone LBIC.
The advantages of having LBIC integrated into the LOANA system are:
- Automatic combined evaluation with other methods, for example with EL or with the global EQE & reflectance in order to rescale the data to absolute values.
- Availability of the sample loading system.
Electroluminescence imaging
These images show the near-bandgap light that a solar cell emits when it is driven in forward bias. The intensity depends mainly on the local minority carrier concentration, so a number of effects that are affecting it become visible: inhomogeneous recombination properties in the base volume and at the rear surface, voltage drops due to series resistance, and cracks. The acquisition of a high-current image takes only a few seconds and should generally accompany IV measurements to reveal e.g. poor contacting quality which may affect the fill factor measurement. Images of series resistance and saturation current are calculated from images under different bias conditions.
The camera`s height and focus settings are motorized and automatically adjusted to the sample size. A zoom mode uses the minimum possible object distance for high resolution close-ups. The images are scaled to mm.
Lock-in thermography
LIT remains the ultimate method for localizing shunts, but also offers other information about recombination, series resistance, etc. The lock-in principle makes the resolution a matter of modulation frequency and time.
The IR camera is motorized in height and focus and automatically adjusts to the sample size. A zoom mode uses the minimum possible object distance for high resolution close-ups. The images are scaled to mm.
Microscope camera
A camera with manually adustable magnification is used to measure the contact finger width automatically, which needs to be known in order to calculate the grid shadowing for EQE and reflectance measurements. Feature sizes can be measured because the images are scaled to milimeters. An alternative and precise method to measure dimensions is to utilize the chuck positioning and a crosshair in the image. The microscope camera is also useful to read laser labels.
Thickness measurement
Similar to a dial gauge the sample thickness is measured wth a contacting rod near the egde of the solar cell. The reproducibility is +/- 3 µm.
After a certain part of the measured thickess is subtracted it is used as the thickness of the silicon in the models for the electro-optical evaluation.
The handling system complements the thickness measurement with the weight measurement.