WAFER PROFILER CVP21

The Wafer Profiler CVP21 is a handy tool to measure doping profiles in semiconductor layers by Electrochemical Capacitance Voltage Profiling (ECV-Profiling, CV-Profiling) in semiconductor research or production. This ECV Profiler (CV-Profiler, C-V-Profiler) furthermore is a very good choice to analyze or develop strategies for Photo-Electrochemical Wet Etching (PEC-Etching) of semiconductors
Manufacturer: WEP
SKU: CVP21
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CVP21 is the COMPLETE SOLUTION:

CVP21 supports the COMPLETE spectrum of materials:

  • Group IV semiconductors as Silicon (Si), Germanium (Ge), Silicon Carbide (SiC), or

  • III-V semiconductors as Gallium Arsenide (GaAs), Indium Phosphide (InP), Gallium Phosphide (GaP), ..., or

  • ternary III-V alloys as Aluminum Gallium Arsenide (AlGaAs), Gallium Indium Phosphide (GaInP), Aluminium Indium Arsenide (AlInAs) ..., or

  • quaternary III-V alloys as Aluminum Gallium Indium Phosphide (AlGaInP), ..., or

  • Nitrides, as Gallium Nitride (GaN), Aluminum Gallium Nitride (AlGaN), Indium Gallium Nitride (InGaN) or Aluminum Indium Nitride (AlInN), or

  • II-VI semiconductors as Zinc Oxide (ZnO), Cadmium Telluride (CdTe), Mercury Cadmium Telluride (HgCdTe, MCT)..., or

  • less commonly used semiconductors (please contact us for sample measurements).

CVP21 supports the COMPLETE sample range:

  • Stacked layers are no problem (the material, the doping and the doping type may vary).

  • No Restrictions concerning the substrate (may be conductive or insulating).

  • Sample size: 4*2 mm² to complete 8" wafer size are standard (smaller samples on request).

CVP21 supports the COMPLETE resolution range:

  • Concentration resolution < 1012 cm-3 to > 1021 cm-3 (*).

  • Depth resolution 1 nm to 100 µm (*).

(*) may depend on material type/ sample quality. Please ask for sample measurements

 

CVP21 comes as a  COMPLETE measurement system:

  • High Reliability system (special concern on electronics, mechanics, optics and fluid system).

  • Calibration-free system (Complete self calibrating electronic system - no needs for cable capacitance calibration).

  • Easy-to-use (Software optimized with full user management - easily used as well in production as in laboratory environment).

  • Wafer-Stepping (Complete wafer stepper is optionally available - to process several measurements on a wafer in full automation).

  • Camera-Control (The process is controlled on-line by a color camera - after each measurement camera data is available in film strip format).

  • Recipes (Measurement recipes are pre-defined and may easily modified by a user with higher priority).

  • Dry-In / Dry-Out: Auto-Load / Unload / Reload (The loading/ un-loading and re-loading of the electrochemical cell is automated and may be easily modified by a user with higher priority. The samples are processed dry-in / dry-out).

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Existing reviews

WEP电化学ECV掺杂浓度检测CVP21
5
德国WEP公司的CVP21电化学C-V剖面浓度测试仪可高效、准确的测量半导体材料(结构,层)中的掺杂浓度分布。选用合适的电解液与材料接触、腐蚀,从而得到材料的掺杂浓度分布。电容值电压扫描和腐蚀过程由软件全自动控制。 电化学ECV剖面浓度测试仪主要用于半导体材料的研究及开发,其原理是使用电化学电容-电压法来测量半导体材料的掺杂浓度分布。电化学ECV(CV-Profiler, C-V Profiler)也是分析或发展半导体光-电化学湿法蚀刻(PEC Etching)很好的选择。CVP21电化学C-V剖面浓度测量仪适用于评估和控制在半导体生产中的外延过程并且以被使用在多种不同的材料上,例如:
gauage | 12/1/2025 11:29 AM
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WEP电化学ECV掺杂浓度检测CVP21
5
WEP电化学ECV掺杂浓度检测CVP21
gauage | 10/17/2025 10:53 AM
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